Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS



Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find






Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register


Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 11, Pages 1692–1698
DOI: https://doi.org/10.21883/JTF.2019.11.48330.119-19
(Mi jtf5460)
 

This article is cited in 4 scientific papers (total in 4 papers)

XXIII International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 11-14, 2019

Application of scanning capacitance force microscopy for detecting impurity phases in ferroelectric triglycine sulfate

R. V. Gainutdinova, A. L. Tolstikhinaa, A. K. Lashkovaa, N. V. Beluginaa, V. N. Shutb, S. E. Mozzharovb, I. F. Kashevichbc

a Shubnikov Institute of Crystallography, Federal Scientific Research Centre Crystallography and Photonics, Russian Academy of Sciences, Moscow, Russia
b Institute of Technical Acoustics, Academy of Sciences of Belarus, Vitebsk
c Vitebsk State University named after P. M. Masherov
Abstract: An inhomogeneous ferroelectric (triglycine-sulfate (TGS) single crystal with a TGS–TGS+Cr periodic growth impurity structure) has been investigated by scanning capacitance force microscopy (SCFM). The specific features of mapping capacitance variations when detecting the electrostatic force at double and triple resonance frequencies are considered. The piezoelectric response, surface potential, and surface topography have been measured. It is shown that the capacitance contrast is formed both on domain walls and on TGS and TGS+Cr stripes. It is demonstrated that SCFM at the electrostatic-force double resonance frequency makes it possible to observe the spatial impurity distribution in the ferroelectric structure in the range of Cr concentrations of about 0.02–0.08 wt %.
Keywords: triglycine sulfate, scanning capacitance force microscopy, profile impurity distribution.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation
This study was supported by the Ministry of Science and Higher Education of the Russian Federation within the State assignment for the Federal Scientific Research Centre Crystallography and Photonics, Russian Academy of Sciences.
Received: 28.03.2019
English version:
Technical Physics, 2019, Volume 64, Issue 11, Pages 1602–1608
DOI: https://doi.org/10.1134/S1063784219110094
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: R. V. Gainutdinov, A. L. Tolstikhina, A. K. Lashkova, N. V. Belugina, V. N. Shut, S. E. Mozzharov, I. F. Kashevich, “Application of scanning capacitance force microscopy for detecting impurity phases in ferroelectric triglycine sulfate”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1692–1698; Tech. Phys., 64:11 (2019), 1602–1608
Citation in format AMSBIB
\Bibitem{GaiTolLas19}
\by R.~V.~Gainutdinov, A.~L.~Tolstikhina, A.~K.~Lashkova, N.~V.~Belugina, V.~N.~Shut, S.~E.~Mozzharov, I.~F.~Kashevich
\paper Application of scanning capacitance force microscopy for detecting impurity phases in ferroelectric triglycine sulfate
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 11
\pages 1692--1698
\mathnet{http://mi.mathnet.ru/jtf5460}
\crossref{https://doi.org/10.21883/JTF.2019.11.48330.119-19}
\elib{https://elibrary.ru/item.asp?id=41300860}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 11
\pages 1602--1608
\crossref{https://doi.org/10.1134/S1063784219110094}
Linking options:
  • https://www.mathnet.ru/eng/jtf5460
  • https://www.mathnet.ru/eng/jtf/v89/i11/p1692
  • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:33
    Full-text PDF :6
     
      Contact us:
     Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024