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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 12, Pages 1971–1977
DOI: https://doi.org/10.21883/JTF.2019.12.48498.230-18
(Mi jtf5446)
 

This article is cited in 7 scientific papers (total in 7 papers)

Physical electronics

Impact of a dopant impurity electronic structure on physical properties, defect structure, and features of lithium niobate doping technology

O. V. Makarova, M. N. Palatnikov, I. V. Biryukova, N. V. Sidorov

Institute of Chemistry and Technology of Rare Elements and Mineral Raw Materials Kola Science Centre of the Russian Academy of Sciences, Apatity, Russia
Full-text PDF (397 kB) Citations (7)
Abstract: The macro- and microstructure of doped LiNbO$_{3}$ crystals is studied, their transmission spectra are investigated, and the effective coefficients characterizing the dopant impurity distribution are determined. We analyze the literature data on phase diagrams of the ternary system Li$_{2}$O–Nb$_{2}$O$_{5}$–dopant oxide and the electron configurations of dopant elements, and the results suggest that this can be used as a basis for designing technological conditions for growing doped lithium niobate crystals and predicting their quality. With $p$-elements (boron), structurally and compositionally uniform LiNbO$_{3}$ crystals can be grown, with the doping impurity not being incorporated in the crystal. $s$- and $d$-metals (magnesium and zinc) have a similar effect on the melt and properties of resulting LiNbO$_{3}$ crystals, which have periodic domain structures and similar types of point defects. Due to their electronic structure, $f$-metals (cerium) bring the melt to such a structure that this enables the formation of a periodic domain structure in LiNbO$_{3}$ crystals during their growth.
Keywords: crystal, lithium niobate, doping, optical microscopy.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0226-IC-2018-0004
Russian Foundation for Basic Research 18-03-00231-а
The work was supported by the Ministry of Education and Science of the Russian Federation (research topic no. 0226-IC-2018-0004, registration number АААА-А18-118022190125-2), and by the Russian Foundation for Basic Research (grant no. 18-03-00231-а).
Received: 09.06.2018
Revised: 25.12.2018
Accepted: 10.04.2019
English version:
Technical Physics, 2019, Volume 64, Issue 12, Pages 1872–1878
DOI: https://doi.org/10.1134/S1063784219120168
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. V. Makarova, M. N. Palatnikov, I. V. Biryukova, N. V. Sidorov, “Impact of a dopant impurity electronic structure on physical properties, defect structure, and features of lithium niobate doping technology”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1971–1977; Tech. Phys., 64:12 (2019), 1872–1878
Citation in format AMSBIB
\Bibitem{MakPalBir19}
\by O.~V.~Makarova, M.~N.~Palatnikov, I.~V.~Biryukova, N.~V.~Sidorov
\paper Impact of a dopant impurity electronic structure on physical properties, defect structure, and features of lithium niobate doping technology
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 12
\pages 1971--1977
\mathnet{http://mi.mathnet.ru/jtf5446}
\crossref{https://doi.org/10.21883/JTF.2019.12.48498.230-18}
\elib{https://elibrary.ru/item.asp?id=41848249}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 12
\pages 1872--1878
\crossref{https://doi.org/10.1134/S1063784219120168}
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  • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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