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This article is cited in 3 scientific papers (total in 3 papers)
Physical electronics
Ranges of hydrogen, deuterium, and helium atoms in amorphous silicon and tungsten
D. S. Meluzova, P. Yu. Babenko, A. P. Shergin, A. N. Zinov'ev Ioffe Institute, St. Petersburg
Abstract:
We have obtained the range distributions for H, D, and He atoms within an energy range of 0.1–100 keV in amorphous W and Si for the normal incidence of bombarding particles. Calculations have been performed both in the binary collision approximation and by a more accurate method of calculating particle trajectories. It is shown that the results of both methods are in good agreement with each other and with experimental data on the mean ranges for the H–Si system. The influence of the attracting well in the particle–solid interaction potential on the results of calculations is estimated.
Received: 09.03.2019 Revised: 07.06.2019 Accepted: 29.06.2019
Citation:
D. S. Meluzova, P. Yu. Babenko, A. P. Shergin, A. N. Zinov'ev, “Ranges of hydrogen, deuterium, and helium atoms in amorphous silicon and tungsten”, Zhurnal Tekhnicheskoi Fiziki, 90:1 (2020), 155–160; Tech. Phys., 65:1 (2020), 145–150
Linking options:
https://www.mathnet.ru/eng/jtf5423 https://www.mathnet.ru/eng/jtf/v90/i1/p155
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