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Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 2, Pages 264–267
DOI: https://doi.org/10.21883/JTF.2020.02.48820.268-19 (Mi jtf5387) 		 
Solid-State Electronics

Development of the processing technique and study of microwave switches based on 4$H$-SiC $p$–$i$–$n$ diodes

A. A. Lebedeva, A. V. Kirillovb, L. P. Romanovb, A. V. Zubovc, A. M. Strel'chuka

a Ioffe Institute, St. Petersburg
b ZAO Svetlana-Elektronpribor, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (504 kB)
DOI: https://doi.org/10.21883/JTF.2020.02.48820.268-19
Abstract: The processing technique for microwave $p$–$i$–$n$ diodes based on SiC (silicon carbide) has been developed. Based on these diodes, switches in the 3-cm range have been fabricated. It has been shown that the working power of the developed switches is about 10 times higher than that based on Si diodes at the same base thickness, which is equal to 5 $\mu$m. The ways of further improvement of the processing technique of these devices have been suggested.
Received: 09.07.2019
Revised: 09.07.2019
Accepted: 13.08.2019
English version:
Technical Physics, 2020, Volume 65, Issue 2, Pages 250–253
DOI: https://doi.org/10.1134/S1063784220020139
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Lebedev, A. V. Kirillov, L. P. Romanov, A. V. Zubov, A. M. Strel'chuk, “Development of the processing technique and study of microwave switches based on 4$H$-SiC $p$–$i$–$n$ diodes”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 264–267; Tech. Phys., 65:2 (2020), 250–253
Citation in format AMSBIB
\Bibitem{LebKirRom20}
\by A.~A.~Lebedev, A.~V.~Kirillov, L.~P.~Romanov, A.~V.~Zubov, A.~M.~Strel'chuk
\paper Development of the processing technique and study of microwave switches based on 4$H$-SiC $p$--$i$--$n$ diodes
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 2
\pages 264--267
\mathnet{http://mi.mathnet.ru/jtf5387}
\crossref{https://doi.org/10.21883/JTF.2020.02.48820.268-19}
\elib{https://elibrary.ru/item.asp?id=42745559}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 2
\pages 250--253
\crossref{https://doi.org/10.1134/S1063784220020139}
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