Several specifics of silicon atom condensation on the surface of a tungsten single crystal

Field emission microscopy was used to study Si condensation on a W surface by varying substrate temperature T and number n of monoatomic layers of the precipitated condensate. A low-temperature Si monolayer with a pure W structure formed at lower temperatures of $T\sim$ 600 K, while another structure of a high-temperature surface silicide monolayer formed at $T\ge$ 1000 K. The orienting effect additionally differed between the low-temperature monolayer and surface silicide during further growth of Si layers. Pure Si crystallites formed starting from the third monolayer ($n\ge$ 3) in the case of condensation on the low-temperature monolayer and starting from $n\ge$ 300 monolayers in the case of condensation on surface silicide. Estimates were obtained for the activation energy Q$_{\operatorname{dif}}$ of Si diffusion into the W lattice and the desorption energy Q$_{\operatorname{des}}$ of Si atoms from the W surface.