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Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 3, Pages 427–429
DOI: https://doi.org/10.21883/JTF.2020.03.48926.17-19
(Mi jtf5358)
 

Physical science of materials

Photovoltaic properties of MnGaInS$_{4}$ single crystals

N. N. Niftiyev

N. Tusi Azerbaijan State Pedagogical University, Baku, Azerbaijan
Abstract: The spectral distribution of photoconductivity and the temperature dependence of photocurrent in MnGaInS$_{4}$ single crystals have been investigated. Photoconductivity spectra demonstrate both intrinsic and impurity conductivity. In the case of manganese deficiency in crystals, an acceptor-type defect is seen in the wavelength range of 0.64–0.76 $\mu$m. The temperature dependence of the MnGaInS$_{4}$ single crystal bandgap is due to exciton–phonon interaction. In the temperature interval studied, photocurrent rises because of thermal depletion of trapping levels. The activation energy of trapping levels has been calculated.
Keywords: monocrystal, photoconductivity, photocurrent, electron – phonon interaction, activation energy.
Received: 22.01.2019
Revised: 02.04.2019
Accepted: 18.09.2019
English version:
Technical Physics, 2020, Volume 65, Issue 3, Pages 407–409
DOI: https://doi.org/10.1134/S1063784220030160
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. N. Niftiyev, “Photovoltaic properties of MnGaInS$_{4}$ single crystals”, Zhurnal Tekhnicheskoi Fiziki, 90:3 (2020), 427–429; Tech. Phys., 65:3 (2020), 407–409
Citation in format AMSBIB
\Bibitem{Nif20}
\by N.~N.~Niftiyev
\paper Photovoltaic properties of MnGaInS$_{4}$ single crystals
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 3
\pages 427--429
\mathnet{http://mi.mathnet.ru/jtf5358}
\crossref{https://doi.org/10.21883/JTF.2020.03.48926.17-19}
\elib{https://elibrary.ru/item.asp?id=42747712}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 3
\pages 407--409
\crossref{https://doi.org/10.1134/S1063784220030160}
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