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Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 7, Pages 1221–1226
DOI: https://doi.org/10.21883/JTF.2020.07.49460.363-19 (Mi jtf5270) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Experimental instruments and technique

Magnetoelastic properties of yttrium–iron garnet films manufactured by means of ion-beam sputtering onto Si and GaAs substrates

S. L. Vysotskyab, Yu. V. Nikulinab, A. V. Kozhevnikova, Yu. V. Khivintsevab, V. K. Sakharova, A. S. Dzhumalievab, Yu. A. Filimonovab, A. I. Stognijc, S. A. Nikitovd

a Saratov Branch, Kotel'nikov Institute of Radio-Engineering and Electronics, Russian Academy of Sciences
b Saratov State University
c Scientific and Practical Center for Material Science, National Academy of Sciences of Belarus, Minsk, Belarus
d Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
Full-text PDF (286 kB) Citations (2)
DOI: https://doi.org/10.21883/JTF.2020.07.49460.363-19
Abstract: The effect is studied of tensile deformations on the spectrum of the ferromagnetic resonance of submicron yttrium–iron garnet polycrystalline films manufactured by means of ion-beam sputtering onto silicon and gallium arsenide substrates. Magnetoelastic constants of films on both substrates, the values of which did not exceed 16% of that of the bulk polycrystalline garnet, were calculated from the magnitude of the frequency shift of the absorption maximum in the ferromagnetic resonance spectrum. An approach is proposed to increase the efficiency of electrical frequency tuning in composite multiferroid structures by means of combining static and dynamic (caused by piezoelectric effect) tensile deformations.
Keywords: ferromagnetic resonance, yttrium iron garnet, magnetoelastic constant, silicon, gallium arsenide.
Funding agency Grant number
Russian Foundation for Basic Research 16-29-14058
18-57-00008
Ministry of Education and Science of the Russian Federation 0030-2019-0013
This work was supported by the Russian Foundation for Basic Research (projects nos. 16-29-14058 and 18-57-00008) and within the framework of state order “Spintronics” (no. 0030-2019-0013).
Received: 15.11.2019
Revised: 15.11.2019
Accepted: 23.01.2020
English version:
Technical Physics, 2020, Volume 65, Issue 7, Pages 1175–1180
DOI: https://doi.org/10.1134/S1063784220070270
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. L. Vysotsky, Yu. V. Nikulin, A. V. Kozhevnikov, Yu. V. Khivintsev, V. K. Sakharov, A. S. Dzhumaliev, Yu. A. Filimonov, A. I. Stognij, S. A. Nikitov, “Magnetoelastic properties of yttrium–iron garnet films manufactured by means of ion-beam sputtering onto Si and GaAs substrates”, Zhurnal Tekhnicheskoi Fiziki, 90:7 (2020), 1221–1226; Tech. Phys., 65:7 (2020), 1175–1180
Citation in format AMSBIB
\Bibitem{VysNikKoz20}
\by S.~L.~Vysotsky, Yu.~V.~Nikulin, A.~V.~Kozhevnikov, Yu.~V.~Khivintsev, V.~K.~Sakharov, A.~S.~Dzhumaliev, Yu.~A.~Filimonov, A.~I.~Stognij, S.~A.~Nikitov
\paper Magnetoelastic properties of yttrium–iron garnet films manufactured by means of ion-beam sputtering onto Si and GaAs substrates
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 7
\pages 1221--1226
\mathnet{http://mi.mathnet.ru/jtf5270}
\crossref{https://doi.org/10.21883/JTF.2020.07.49460.363-19}
\elib{https://elibrary.ru/item.asp?id=43800636}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 7
\pages 1175--1180
\crossref{https://doi.org/10.1134/S1063784220070270}
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