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Zhurnal Tekhnicheskoi Fiziki, 2020, Volume 90, Issue 10, Pages 1758–1763
DOI: https://doi.org/10.21883/JTF.2020.10.49810.431-19 (Mi jtf5191) 		 
This article is cited in 7 scientific papers (total in 7 papers)

Solid-State Electronics

Problems arising from using KOH–IPA etchant to texture silicon wafers

N. A. Chuchvagaab, N. M. Kislyakovaa, N. S. Tokmoldinabc, B. A. Rakymetova, A. S. Serikkhanova

a Satbayev University, Institute of Physics and Technology, Almaty, Kazakhstan
b Scientific Production Center of Agricultural Engineering, Almaty
c Al-Farabi Kazakh National University
Full-text PDF (1918 kB) Citations (7)
DOI: https://doi.org/10.21883/JTF.2020.10.49810.431-19
Abstract: Wet chemical processing of single-crystal silicon wafers, including their texturing, is a key process step in the fabrication of high-efficiency solar cells. Methods of texturing single-crystal silicon wafers used in solar cell technology have been studied. Optimal texturing parameters have been determined for test samples, and the most effective etchant for texturing, a KOH–isopropanol solution, has been found.
Keywords: photovoltaics, crystalline silicon, HIT, photocell, texturing, wet chemistry, SEM.
Funding agency Grant number
Ministry of Education and Science of the Republic of Kazakhstan BR05236498
AP05133645
AP05130235
AO Science Foundation 0355-18-ÃÊ
This research was supported by the Ministry of Education and Science of Republic of Kazakhstan (projects nos. BR05236498, AP05133645, AP05133651, AP05130235) and AO Science Foundation (project no. 0355-18-GK).
Received: 30.12.2019
Revised: 05.03.2020
Accepted: 05.03.2020
English version:
Technical Physics, 2020, Volume 65, Issue 10, Pages 1685–1689
DOI: https://doi.org/10.1134/S1063784220100047
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. A. Chuchvaga, N. M. Kislyakova, N. S. Tokmoldin, B. A. Rakymetov, A. S. Serikkhanov, “Problems arising from using KOH–IPA etchant to texture silicon wafers”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1758–1763; Tech. Phys., 65:10 (2020), 1685–1689
Citation in format AMSBIB
\Bibitem{ChuKisTok20}
\by N.~A.~Chuchvaga, N.~M.~Kislyakova, N.~S.~Tokmoldin, B.~A.~Rakymetov, A.~S.~Serikkhanov
\paper Problems arising from using KOH–IPA etchant to texture silicon wafers
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2020
\vol 90
\issue 10
\pages 1758--1763
\mathnet{http://mi.mathnet.ru/jtf5191}
\crossref{https://doi.org/10.21883/JTF.2020.10.49810.431-19}
\elib{https://elibrary.ru/item.asp?id=44154134}
\transl
\jour Tech. Phys.
\yr 2020
\vol 65
\issue 10
\pages 1685--1689
\crossref{https://doi.org/10.1134/S1063784220100047}
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    • This publication is cited in the following 7 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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