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This article is cited in 1 scientific paper (total in 1 paper)
XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10--13, 2020
Physics of nanostructures
The influence of integrated resistors formed under ion irradiation on the superconducting transitions of niobium nitride nanoconductors
B. A. Gurovicha, K. E. Prikhod'koab, B. V. Goncharova, M. M. Dementyevaa, L. V. Kutuzova, D. A. Komarova, A. G. Domantovskiia, V. L. Stolyarova, E. D. Ol'shanskiia a National Research Centre "Kurchatov Institute", Moscow
b National Engineering Physics Institute "MEPhI", Moscow
Abstract:
The influence of integrated resistors formed under irradiation in a nanowire on its superconducting transitions has been investigated. Niobium nitride nanowires with widths of 75–20 000 nm fabricated from a 5-nm-thick NbN film on single-crystal silicon substrates coated with a 0.3-$\mu$m-thick thermal silicon oxide layer and on sapphire substrates have been considered. The influence of a built-in resistive region on the critical current of transition from the superconducting to normal state is described.
Received: 01.04.2020 Revised: 01.04.2020 Accepted: 01.04.2020
Citation:
B. A. Gurovich, K. E. Prikhod'ko, B. V. Goncharov, M. M. Dementyeva, L. V. Kutuzov, D. A. Komarov, A. G. Domantovskii, V. L. Stolyarov, E. D. Ol'shanskii, “The influence of integrated resistors formed under ion irradiation on the superconducting transitions of niobium nitride nanoconductors”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1860–1863; Tech. Phys., 65:11 (2020), 1777–1779
Linking options:
https://www.mathnet.ru/eng/jtf5153 https://www.mathnet.ru/eng/jtf/v90/i11/p1860
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