Secondary-ion mass spectroscopy for analysis of the implanted hydrogen profile in silicon and impurity composition of silicon-on-insulator structures

Theoretical and experimental data are reported for the distribution of hydrogen in silicon in SiO$_{2}$–Si structures after the implantation of hydrogen. Hydrogen is implanted under conditions used in preparing silicon-on-insulator structures by the hydrogen transfer technology. A technique for quantitative estimation of implanted hydrogen high concentrations in silicon using secondary-ion mass spectrometry is suggested. It includes the quantitative calibration of the hydrogen atom concentration and normalization of the depth of analysis from sputtering time. Data for the implanted hydrogen depth distribution in silicon and in Si–SiO$_{2}$ structures are presented. The lateral uniformity and temporal stability of implanted structures have been monitored.