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XXIV International Symposium Nanophysics and Nanoelectronics, Nizhny Novgorod, March 10--13, 2020
Solids
An atomic force microscopic study of resistive switching resonance activation in ZrO$_{2}$(Y) films
D. O. Filatov, D. A. Antonov, I. N. Antonov, M. A. Ryabova, O. N. Gorshkov Lobachevsky State University of Nizhny Novgorod
Abstract:
Local resistive switching in the contact of an atomic force microscope (AFM) probe to ZrO$_{2}$(Y) films (including those with a Та$_{2}$O$_{5}$ sublayer) on conducting substrates was studied. Switching was performed by triangular voltage pulses with the imposition of a high-frequency sinusoidal signal. The dependence of the difference in the current strength through the AFM probe in the low-and high-resistance States of dielectric films on the frequency of the high-frequency sinusoidal signal was observed at frequencies corresponding to the characteristic frequency of jumps of О$^{2-}$ ions - for oxygen vacancies in ZrO$_{2}$(Y) and Та$_{2}$O$_{5}$ at 300K. The effect is associated with resonant activation of О$^{2-}$ ion migration along with oxygen vacancies by an external high-frequency electric field.
Keywords:
memristor, resistive switching, atomic force microscopy, resonance activation.
Received: 02.04.2020 Revised: 02.04.2020 Accepted: 02.04.2020
Citation:
D. O. Filatov, D. A. Antonov, I. N. Antonov, M. A. Ryabova, O. N. Gorshkov, “An atomic force microscopic study of resistive switching resonance activation in ZrO$_{2}$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1825–1829; Tech. Phys., 65:11 (2020), 1744–1747
Linking options:
https://www.mathnet.ru/eng/jtf5147 https://www.mathnet.ru/eng/jtf/v90/i11/p1825
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