A bipolar transistor-based high-power chaotic oscillator with selected inertia

The feasibility of creating a high-power wideband source of chaotic microwave signals that is constructed around a single high-power bipolar transistor has been demonstrated for the first time. This has become possible after implementing a selected-inertia oscillator. Theoretical calculations supporting the idea of fabricating such an oscillator are presented. A hybrid integrated prototype of a selected-inertia chaotic oscillator that is based on a 2T982A-2 high-power transistor has been designed. The feasibility of generating chaotic microwave signals with a center frequency of 4.55 GHz and an overall power of 1.1 W has been proved. The effective width of the chaotic signal power spectrum equals 11% at a spectral characteristic ripple of 3 dB, the spectral density of noise oscillations is 2.2 $\times$ 10$^{-3}$ W/MHz, and the e1fficiency is 15%.