The influence of space-charge-limited current on the dielectric properties of polycrystalline films of fullerite C$_{60}$

The dielectric properties of polycrystalline fullerite films with a thickness of $\sim$300 nm included in $p$-Si/C$_{60}$/InGa structures under dc electric fields with a strength up to 3.3 $\times$ 10$^7$ V/m have been investigated in the frequency range of 30–10$^6$ Hz. It is established that, at negative polarity of an InGa electrode (when electron injection from the metal to fullerite is facilitated), an anomalous increase in the sample capacitance is observed at frequencies below 1000 Hz (the capacitance at a low frequency is higher than that at a high frequency by a factor of more than 10$^3$). An explanation for this effect is proposed.