Determination of thickness in silicon carbide structures by frequency analysis of the reflection spectrum

The paper introduces a method of determining thicknesses of single- and multi-layer silicon carbide structures using infrared reflection spectrum frequency analysis. Spectrum waveform is affected by spectral interference in layers or groups of layers. LabView software package offered a solution to perform spectral analysis. The results are provided both for model structures and experimental spectra. Model structure’ reflection spectrum was evaluated using a dielectric function that took into account the response of lattice vibrations and free charge carriers. Experimental spectra were obtained from a real multilayer structure manufactured for power electronics devices.