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This article is cited in 2 scientific papers (total in 2 papers)
Solid-State Electronics
Temperature dependence of the sensitivity of silicon photomultipliers in the regime of single-photon detection of ultraviolet radiation
A. A. Bogdanov, Yu. V. Tuboltsev, Yu. V. Chichagov, E. E. Kholupenko, A. M. Krassilchtchikov Ioffe Institute, St. Petersburg
Abstract:
The temperature dependences of the dark count and efficiency of single-photon detection for two silicon avalanche photodetectors of ultraviolet radiation (OnSemi/SensL MicroFJ-60035 and Hamamatsu VUV4 S13371-6050CQ-02) operating at a wavelength of 277 nm are studied experimentally in the context of development of a new recording camera for the TAIGA-IACT gamma-telescope. It is shown that the main characteristics of these detectors correspond to the manufacturer certification. The signal readout systems have been developed and tested. It is concluded that such detectors are applicable in recording cameras of Cherenkov gamma telescopes.
Keywords:
SiPM, silicon photomultipliers, PDE, dark count, ultraviolet, TAIGA-IACT, front-end electronics.
Received: 15.09.2020 Revised: 18.11.2020 Accepted: 18.11.2020
Citation:
A. A. Bogdanov, Yu. V. Tuboltsev, Yu. V. Chichagov, E. E. Kholupenko, A. M. Krassilchtchikov, “Temperature dependence of the sensitivity of silicon photomultipliers in the regime of single-photon detection of ultraviolet radiation”, Zhurnal Tekhnicheskoi Fiziki, 91:5 (2021), 821–826; Tech. Phys., 66:5 (2021), 699–704
Linking options:
https://www.mathnet.ru/eng/jtf5019 https://www.mathnet.ru/eng/jtf/v91/i5/p821
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