Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 6, Pages 1059–1062
DOI: https://doi.org/10.21883/JTF.2021.06.50878.325-20 (Mi jtf5004) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Experimental instruments and technique

Dispersion of plasma oscillations in amorphous chalcogenide semiconductors

V. M. Stozharov

Herzen State Pedagogical University of Russia, St. Petersburg
Full-text PDF (106 kB) Citations (2)
DOI: https://doi.org/10.21883/JTF.2021.06.50878.325-20
Abstract: Using the method of plasma oscillation dispersion, thin films of amorphous chalcogenide semiconductors have been investigated and the asymmetry in the number of electrons in the region of X-ray total external reflection and plasmon excitation has been calculated. Loop-shaped dispersion curves have been observed, and the mean energies of plasmons, together with plasmon-related internal stresses and film polarization, have been determined. It has been found that internal stresses and polarization in a molybdenum sulfide amorphous film are absent.
Keywords: dispersion, plasmons, semiconductor, energy, asymmetry.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 3.5005.2017/ВУ
This study was financially supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 3.5005.2017/VU.
Received: 26.11.2020
Revised: 17.12.2020
Accepted: 22.12.2020
English version:
Technical Physics, 2021, Volume 66, Issue 8, Pages 938–941
DOI: https://doi.org/10.1134/S1063784221060189
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. M. Stozharov, “Dispersion of plasma oscillations in amorphous chalcogenide semiconductors”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 1059–1062; Tech. Phys., 66:8 (2021), 938–941
Citation in format AMSBIB
\Bibitem{Sto21}
\by V.~M.~Stozharov
\paper Dispersion of plasma oscillations in amorphous chalcogenide semiconductors
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 91
\issue 6
\pages 1059--1062
\mathnet{http://mi.mathnet.ru/jtf5004}
\crossref{https://doi.org/10.21883/JTF.2021.06.50878.325-20}
\elib{https://elibrary.ru/item.asp?id=46468650}
\transl
\jour Tech. Phys.
\yr 2021
\vol 66
\issue 8
\pages 938--941
\crossref{https://doi.org/10.1134/S1063784221060189}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85124419557}
Linking options:
  • https://www.mathnet.ru/eng/jtf5004
  • https://www.mathnet.ru/eng/jtf/v91/i6/p1059
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:35
    Full-text PDF :14
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024