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Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 6, Pages 1040–1044
DOI: https://doi.org/10.21883/JTF.2021.06.50876.326-20 (Mi jtf5002) 		 
Physical electronics

Topology of PbSnTe:In layers versus indium concentration

D. V. Ishchenkoa, A. N. Akimova, I. O. Akhundova, V. A. Golyashovab, A. E. Klimovac, A. B. Loginovd, B. A. Loginove, N. S. Pschina, A. S. Tarasova, E. V. Fedosenkoa, V. N. Sherstyakovaa

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Novosibirsk State Technical University
d Lomonosov Moscow State University
e National Research University of Electronic Technology
Full-text PDF (639 kB)
DOI: https://doi.org/10.21883/JTF.2021.06.50876.326-20
Abstract: The surface topology of epitaxial films of lead tin telluride solid solution (including with In additive, Pb$_{1-x}$Sn$_{x}$Te:In) has been examined using atomic force microscopy. The films have been grown on BaF$_2$(111) single-crystal substrates and on a CaF$_2$/BaF$_2$ buffer layer covering a Si(111) wafer. It has been shown that the relief statistical parameters depend on film growth conditions and the incorporation mechanism of indium, an excess amount of which has been detected on the surface by ex situ XPS.
Keywords: Topological insulator, surfacem solid solution, A$^{\mathrm{IV}}$B$^{\mathrm{VI}}$, lead tin telluride.
Funding agency Grant number
Russian Foundation for Basic Research 20-02-00324
This study was partially supported by the Russian Foundation for Basic Research, grant no. 20-02-00324.
Received: 27.11.2020
Revised: 19.01.2021
Accepted: 21.01.2021
English version:
Technical Physics, 2021, Volume 66, Issue 7, Pages 878–882
DOI: https://doi.org/10.1134/S1063784221060086
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. V. Ishchenko, A. N. Akimov, I. O. Akhundov, V. A. Golyashov, A. E. Klimov, A. B. Loginov, B. A. Loginov, N. S. Pschin, A. S. Tarasov, E. V. Fedosenko, V. N. Sherstyakova, “Topology of PbSnTe:In layers versus indium concentration”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 1040–1044; Tech. Phys., 66:7 (2021), 878–882
Citation in format AMSBIB
\Bibitem{IshAkiAkh21}
\by D.~V.~Ishchenko, A.~N.~Akimov, I.~O.~Akhundov, V.~A.~Golyashov, A.~E.~Klimov, A.~B.~Loginov, B.~A.~Loginov, N.~S.~Pschin, A.~S.~Tarasov, E.~V.~Fedosenko, V.~N.~Sherstyakova
\paper Topology of PbSnTe:In layers versus indium concentration
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 91
\issue 6
\pages 1040--1044
\mathnet{http://mi.mathnet.ru/jtf5002}
\crossref{https://doi.org/10.21883/JTF.2021.06.50876.326-20}
\elib{https://elibrary.ru/item.asp?id=46468648}
\transl
\jour Tech. Phys.
\yr 2021
\vol 66
\issue 7
\pages 878--882
\crossref{https://doi.org/10.1134/S1063784221060086}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85124420292}
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