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Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 10, Pages 1474–1478
DOI: https://doi.org/10.21883/JTF.2021.10.51359.105-21 (Mi jtf4915) 		 
XXV International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 9--12, 2021
Solids

Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks

D. A. Antonova, D. O. Filatova, A. S. Novikova, A. V. Kruglova, I. N. Antonova, A. V. Zdoroveyshchevb, O. N. Gorshkova

a National Research Lobachevsky State University of Nizhny Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (1129 kB)
DOI: https://doi.org/10.21883/JTF.2021.10.51359.105-21
Abstract: The resistive switching effect in individual ferromagnetic filaments in memristive stacks based on ZrO$_{2}$(Y)/Ni functional layers was studied experimentally. A conductive probe of an atomic force microscope played a role of a movable top electrode of a virtual memristive stack. The features of bipolar-type resistive switching found were related to the rapture and restoring of the filaments containing Ni atoms in the ZrO$_2$(Y) dielectric films and are probably caused by different degree of metallization of the filaments. The filaments fromed were manifested in the images obtained by magnetic force microscopy as single-domain ferromagnetic particles.
Keywords: memristor, resistive switching, atomic force microscopy, ferromagnetic filaments.
Funding agency Grant number
Russian Foundation for Basic Research 20-02-00830а
Russian Science Foundation 18-72-10061
Received: 12.04.2021
Revised: 12.04.2021
Accepted: 12.04.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. A. Antonov, D. O. Filatov, A. S. Novikov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1474–1478
Citation in format AMSBIB
\Bibitem{AntFilNov21}
\by D.~A.~Antonov, D.~O.~Filatov, A.~S.~Novikov, A.~V.~Kruglov, I.~N.~Antonov, A.~V.~Zdoroveyshchev, O.~N.~Gorshkov
\paper Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 91
\issue 10
\pages 1474--1478
\mathnet{http://mi.mathnet.ru/jtf4915}
\crossref{https://doi.org/10.21883/JTF.2021.10.51359.105-21}
\elib{https://elibrary.ru/item.asp?id=46491200}
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