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Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 91, Issue 10, Pages 1431–1440
DOI: https://doi.org/10.21883/JTF.2021.10.51354.66-21 (Mi jtf4910) 		 
XXV International Symposium on Nanophysics and Nanoelectronics, Nizhny Novgorod, March 9--12, 2021
Theoretical and Mathematical Physics

Dissipative electron tunneling in vertically coupled asymmetric double InAs/GaAs(001) quantum dots

M. B. Semenova, V. D. Krevchika, D. O. Filatovb, A. V. Shorokhovacde, A. P. Shkurinovaf, I. A. Ozheredovaf, P. V. Krevchika, Y. H. Wangg, T. R. Lig, A. K. Malikh, M. O. Marychevb, N. V. Baidusb, I. M. Semenova

a Penza State University
b Lobachevsky State University of Nizhny Novgorod
c Jyväskylä, Seminaarinkatu, 15, PO BOX 35, Fl-40014, Finland
d International Research Centre Mag Top, Institute of Physics, Polish Academy of Sciences, Aleja Lotnikow 32/46, PL-02668 Warsaw, Poland
e Ogarev Mordovia State University
f Institute on Laser and Information Technologies, Russian Academy of Scienses, Shatura, Moskovskaya obl.
g Key Laboratory for Special Function Materials, School of Physical Science and Technology, Lanzhou University, 730000 Lanzhou, China
h Department of Physics, Multanimal Modi College Modinagar, 201204 Uttar Prasesh, India
Full-text PDF (767 kB)
DOI: https://doi.org/10.21883/JTF.2021.10.51354.66-21
Abstract: We report on the results of experimental studies of the photoelectric properties of a GaAs $p$–$i$–$n$ photodiode with InAs/GaAs(001) double asymmetric quantum dots (DAQDs) grown by self-assembling in Metal Organic Vapor Phase Epitaxy (MOVPE) process. Three peaks were observed in the dependence of the photocurrent on the reverse bias measured at monochromatic photoexcitation of the DAQDs at the wavelength corresponding to the energy of interband optical transitions between the ground hole and electron states in the bigger QDs. These peaks were related to the tunneling of the photoexcited electrons between the QDs including the dissipative one (with emission and absorption of the optical phonons). The experimental results agree qualitatively with the theoretical field dependence of the 1D dissipative tunneling probability between the QDs.
Keywords: vertically aligned double asymmetric quantum dots, InAs, GaAs, optical tunneling junctions, photoconductivity, dissipative tunneling.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0748-2020-0012
Russian Foundation for Basic Research 18-42-130007 р_а
Foundation for Polish Science MAB/2017/1
Received: 18.03.2021
Revised: 18.03.2021
Accepted: 18.03.2021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. B. Semenov, V. D. Krevchik, D. O. Filatov, A. V. Shorokhov, A. P. Shkurinov, I. A. Ozheredov, P. V. Krevchik, Y. H. Wang, T. R. Li, A. K. Malik, M. O. Marychev, N. V. Baidus, I. M. Semenov, “Dissipative electron tunneling in vertically coupled asymmetric double InAs/GaAs(001) quantum dots”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1431–1440
Citation in format AMSBIB
\Bibitem{SemKreFil21}
\by M.~B.~Semenov, V.~D.~Krevchik, D.~O.~Filatov, A.~V.~Shorokhov, A.~P.~Shkurinov, I.~A.~Ozheredov, P.~V.~Krevchik, Y.~H.~Wang, T.~R.~Li, A.~K.~Malik, M.~O.~Marychev, N.~V.~Baidus, I.~M.~Semenov
\paper Dissipative electron tunneling in vertically coupled asymmetric double InAs/GaAs(001) quantum dots
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2021
\vol 91
\issue 10
\pages 1431--1440
\mathnet{http://mi.mathnet.ru/jtf4910}
\crossref{https://doi.org/10.21883/JTF.2021.10.51354.66-21}
\elib{https://elibrary.ru/item.asp?id=46491195}
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