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Zhurnal Tekhnicheskoi Fiziki, 1990, Volume 60, Issue 6, Pages 170–171 (Mi jtf3900)  
Brief Communications

RECOMBINATION PROPERTIES OF GALLIUM-ARSENIDE EPITAXIAL STRUCTURES

V. F. Korotov, N. Stanev, V. I. Khitko, A. M. Yanchenko
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Document Type: Article
Language: Russian
Citation: V. F. Korotov, N. Stanev, V. I. Khitko, A. M. Yanchenko, “RECOMBINATION PROPERTIES OF GALLIUM-ARSENIDE EPITAXIAL STRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 60:6 (1990), 170–171
Citation in format AMSBIB
\Bibitem{1}
\by V.~F.~Korotov, N.~Stanev, V.~I.~Khitko, A.~M.~Yanchenko
\paper RECOMBINATION PROPERTIES OF GALLIUM-ARSENIDE EPITAXIAL STRUCTURES
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 1990
\vol 60
\issue 6
\pages 170--171
\mathnet{http://mi.mathnet.ru/jtf3900}
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