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Zhurnal Tekhnicheskoi Fiziki, 1989, Volume 59, Issue 2, Pages 106–110 (Mi jtf3213)  
Solid-State Electronics

FORMATION OF DISLOCATION-INDUCED HETEROGENEITY OF COMPOSITION OF GALLIUM-ARSENIDE CRYSTALS

I. A. Kovalchuk, A. V. Markov, M. V. Mezhennyi, M. G. Mil'vidskii, V. B. Osvenskii
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Document Type: Article
Language: Russian
Citation: I. A. Kovalchuk, A. V. Markov, M. V. Mezhennyi, M. G. Mil'vidskii, V. B. Osvenskii, “FORMATION OF DISLOCATION-INDUCED HETEROGENEITY OF COMPOSITION OF GALLIUM-ARSENIDE CRYSTALS”, Zhurnal Tekhnicheskoi Fiziki, 59:2 (1989), 106–110
Citation in format AMSBIB
\Bibitem{MarMilOsv89}
\by I.~A.~Kovalchuk, A.~V.~Markov, M.~V.~Mezhennyi, M.~G.~Mil'vidskii, V.~B.~Osvenskii
\paper FORMATION OF DISLOCATION-INDUCED HETEROGENEITY OF COMPOSITION OF
GALLIUM-ARSENIDE CRYSTALS
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 1989
\vol 59
\issue 2
\pages 106--110
\mathnet{http://mi.mathnet.ru/jtf3213}
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