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Zhurnal Tekhnicheskoi Fiziki, 1988, Volume 58, Issue 6, Pages 1180–1181 (Mi jtf2903)  
Brief Communications

LIFETIME OF PRIMARY RADIATION DEFECTS IN SILICON

A. N. Kraichinskii, L. V. Mizrukhin, N. I. Ostashko, V. I. Shakhovtsov
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Document Type: Article
Language: Russian
Citation: A. N. Kraichinskii, L. V. Mizrukhin, N. I. Ostashko, V. I. Shakhovtsov, “LIFETIME OF PRIMARY RADIATION DEFECTS IN SILICON”, Zhurnal Tekhnicheskoi Fiziki, 58:6 (1988), 1180–1181
Citation in format AMSBIB
\Bibitem{Sha88}
\by A.~N.~Kraichinskii, L.~V.~Mizrukhin, N.~I.~Ostashko, V.~I.~Shakhovtsov
\paper LIFETIME OF PRIMARY RADIATION DEFECTS IN SILICON
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 1988
\vol 58
\issue 6
\pages 1180--1181
\mathnet{http://mi.mathnet.ru/jtf2903}
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