Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Zhurnal Tekhnicheskoi Fiziki, 1984, Volume 54, Issue 2, Pages 408–410 (Mi jtf1685)  
Brief Communications

THE DEVELOPMENT OF THE POSITRON-ANNIHILATION METHOD FOR THE STUDY OF PROPERTIES OF MONOCRYSTALLINE SILICON

I. Ya. Dekhtyar, S. P. Likhtorovich, M. M. Nishchenko

Institute for Metal Physics of Ukraine Academy of Sciences
Full-text PDF (460 kB)
Received: 25.05.1983
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. Ya. Dekhtyar, S. P. Likhtorovich, M. M. Nishchenko, “THE DEVELOPMENT OF THE POSITRON-ANNIHILATION METHOD FOR THE STUDY OF PROPERTIES OF MONOCRYSTALLINE SILICON”, Zhurnal Tekhnicheskoi Fiziki, 54:2 (1984), 408–410
Citation in format AMSBIB
\Bibitem{DekLikNis84}
\by I.~Ya.~Dekhtyar, S.~P.~Likhtorovich, M.~M.~Nishchenko
\paper THE DEVELOPMENT OF THE POSITRON-ANNIHILATION METHOD FOR THE STUDY OF
PROPERTIES OF MONOCRYSTALLINE SILICON
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 1984
\vol 54
\issue 2
\pages 408--410
\mathnet{http://mi.mathnet.ru/jtf1685}
Linking options:
  • https://www.mathnet.ru/eng/jtf1685
  • https://www.mathnet.ru/eng/jtf/v54/i2/p408
    • Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Zhurnal Tekhnicheskoi Fiziki Zhurnal Tekhnicheskoi Fiziki
    Statistics & downloads:
    Abstract page:33
    Full-text PDF :13
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024