|
Zhurnal Tekhnicheskoi Fiziki, 1986, Volume 56, Issue 4, Pages 805–807
(Mi jtf165)
|
|
|
|
Brief Communications
PECULIARITIES OF PHOTOTRANSDUCERS BASED ON 3-LAYER SEMICONDUCTIVE
HETEROSTRUCTURES
S. Yu. Pavelets, T. M. Svanidze, V. P. Tarasenko Institute of Semiconductors of the Academy of Sciences of the Ukrainian SSR
Received: 05.06.1985
Citation:
S. Yu. Pavelets, T. M. Svanidze, V. P. Tarasenko, “PECULIARITIES OF PHOTOTRANSDUCERS BASED ON 3-LAYER SEMICONDUCTIVE
HETEROSTRUCTURES”, Zhurnal Tekhnicheskoi Fiziki, 56:4 (1986), 805–807
Linking options:
https://www.mathnet.ru/eng/jtf165 https://www.mathnet.ru/eng/jtf/v56/i4/p805
|
Statistics & downloads: |
Abstract page: | 44 | Full-text PDF : | 13 |
|