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Zhurnal Tekhnicheskoi Fiziki, 1985, Volume 55, Issue 10, Pages 2064–2066 (Mi jtf1503)  
Brief Communications

FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF OBTAINING PLANAR SILICON P-N-JUNCTIONS

N. T. Bagraev, V. A. Mashkov, R. P. Seisyan, V. L. Sukhanov, N. M. Shmidt

Ioffe Physico-Technical Institute USSR Academy of Sciences, Leningrad
Full-text PDF (491 kB)
Received: 25.09.1984
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. T. Bagraev, V. A. Mashkov, R. P. Seisyan, V. L. Sukhanov, N. M. Shmidt, “FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF OBTAINING PLANAR SILICON P-N-JUNCTIONS”, Zhurnal Tekhnicheskoi Fiziki, 55:10 (1985), 2064–2066
Citation in format AMSBIB
\Bibitem{BagMasSei85}
\by N.~T.~Bagraev, V.~A.~Mashkov, R.~P.~Seisyan, V.~L.~Sukhanov, N.~M.~Shmidt
\paper FORMATION OF HETEROGENEOUS COMPENSATION DOMAIN IN THE PROCESS OF
OBTAINING PLANAR SILICON P-N-JUNCTIONS
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 1985
\vol 55
\issue 10
\pages 2064--2066
\mathnet{http://mi.mathnet.ru/jtf1503}
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