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Zhurnal Tekhnicheskoi Fiziki, 1985, Volume 55, Issue 3, Pages 628–631 (Mi jtf1173)  
Brief Communications

EFFECTS PRECEDING THE TRANSITION OF P-TYPE SEMICONDUCTOR AUTOELECTRON EMISSION INTO EXPLOSIVE EMISSION

N. V. Egorov

Research Institute of Physics Leningrad State University
Full-text PDF (522 kB)
Received: 17.02.1984
Revised: 04.04.1984
Bibliographic databases:
Document Type: Article
UDC: 637.533.8 : 539.293
Language: Russian
Citation: N. V. Egorov, “EFFECTS PRECEDING THE TRANSITION OF P-TYPE SEMICONDUCTOR AUTOELECTRON EMISSION INTO EXPLOSIVE EMISSION”, Zhurnal Tekhnicheskoi Fiziki, 55:3 (1985), 628–631
Citation in format AMSBIB
\Bibitem{Ego85}
\by N.~V.~Egorov
\paper EFFECTS PRECEDING THE TRANSITION OF P-TYPE SEMICONDUCTOR AUTOELECTRON
EMISSION INTO EXPLOSIVE EMISSION
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 1985
\vol 55
\issue 3
\pages 628--631
\mathnet{http://mi.mathnet.ru/jtf1173}
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