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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2007, Volume 85, Issue 1, Pages 69–73
(Mi jetpl949)
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This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Hall breakdown in a modulation-doped GaAs/AlAs heterostructure
A. A. Bykova, I. V. Marchishina, A. K. Bakarova, J.-q. Zhangb, S. A. Vitkalovb a Institute of Semiconductor Physics of SB RAS
b City College of the City University of New York, Physics Department
Abstract:
The effect of dc current I dc on the electron transport in a GaAs quantum well with AlAs/GaAs superlattice barriers is studied experimentally at a temperature of 4.2 K in magnetic fields up to 2 T. A sharp increase in resistance R xx is observed in magnetic fields higher than the critical field B c. The value of B c is found to decrease with increasing the current I dc. The phenomenon observed in the experiment is qualitatively explained by the electric breakdown of superlattice barriers under the action of the Hall field.
Received: 07.11.2006 Revised: 30.11.2006
Citation:
A. A. Bykov, I. V. Marchishin, A. K. Bakarov, J.-q. Zhang, S. A. Vitkalov, “Hall breakdown in a modulation-doped GaAs/AlAs heterostructure”, Pis'ma v Zh. Èksper. Teoret. Fiz., 85:1 (2007), 69–73; JETP Letters, 85:1 (2007), 63–66
Linking options:
https://www.mathnet.ru/eng/jetpl949 https://www.mathnet.ru/eng/jetpl/v85/i1/p69
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Abstract page: | 300 | Full-text PDF : | 78 | References: | 48 |
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