Determination of Landau's Fermi-liquid parameters in Si-MOSFET systems

We analyze experimental data in order to evaluate Landau's Fermi-liquid parameters. By using row data of recent Shubnikov -de Haas measurements we derive, as function of the electron density $n_s$, results for the compressibility mass of the charged two-dimensional electron gas. The compressibility mass is nearly equal to the transport mass even in the density region where the transport mass has the tendency to diverge. We conclude that Landau's Fermi-liquid parameter $F_0^s(n_s)$ is nearly independent of electron density and near to zero. This result is derived for silicon (100) and silicon (111) surfaces. We also obtain the dependence of $F_1^s(n_s)$, determining the transport mass, and of $F_0^a(n_s)$, determining the spin-susceptibility.