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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2007, Volume 86, Issue 8, Pages 594–597
(Mi jetpl891)
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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Formation of highly crystalline $C_{60}$ molecular films on Bi(0001)/Si(111) surface
A. I. Oreshkina, R. Z. Bakhtizinb, J. T. Sadowskic, Y. Fujikawac, T. Sakuraic a Moscow State University, Department of Physics
b Department of Physical Electronics, Bashkir State University
c Institute for Materials Research, Tohoku University
Abstract:
We report the results of scanning tunneling microscopy (STM) investigation of a controllable growth of $C_{60}$ adsorption on the Bi(0001)/Si(111) surface. Using UHV STM it has been shown that the most favorable sites for initial stage of $C_{60}$ adsorption are the double steps and domain boundaries. At $\sim1$ monolayer of $C_{60}$ coverage the modulation pattern caused by epitaxial relation between $C_{60}$ and $Bi$ unit cells has been observed. Increasing of $C_{60}$ coverage up to several monolayers results in the formation of highly crystalline molecular film.
Received: 27.08.2007
Citation:
A. I. Oreshkin, R. Z. Bakhtizin, J. T. Sadowski, Y. Fujikawa, T. Sakurai, “Formation of highly crystalline $C_{60}$ molecular films on Bi(0001)/Si(111) surface”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:8 (2007), 594–597; JETP Letters, 86:8 (2007), 522–525
Linking options:
https://www.mathnet.ru/eng/jetpl891 https://www.mathnet.ru/eng/jetpl/v86/i8/p594
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