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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2007, Volume 86, Issue 4, Pages 294–298 (Mi jetpl835)  

This article is cited in 9 scientific papers (total in 9 papers)

CONDENSED MATTER

Giant hysteresis of magnetoresistance in the quantum hall effect regime

M. V. Budantseva, A. G. Pogosova, A. E. Plotnikova, A. K. Bakarova, A. I. Toropova, J. C. Portalbcd

a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS
b GHMFL-CNRS, BP-166, F-38042 Grenoble, Cedex 9, France
c INSA-Toulouse, Toulouse 31077, Cedex 4, France
d Institut Universitaire de France, Toulouse, France
Full-text PDF (763 kB) Citations (9)
References:
Abstract: A simple system consisting of a two-dimensional electron gas with a narrow conducting wire is studied. In this system, a giant hysteresis of both longitudinal and Hall magnetoresistances in the quantum Hall effect regime is observed for even and odd filling factors v of the Landau levels. At v = 1 and v = 2, the giant hysteresis occurs in the background of the zero-resistance plateau, and the width of the hysteresis loop in a magnetic field is comparable to the plateau width. At the entry to the hysteresis region, the magnetoresistance varies in a threshold manner; i.e., a magnetically induced breakdown of the quantum Hall effect takes place. It is shown that the system under study reflects the relaxation processes in the two-dimensional electron gas adjacent to the wire and, therefore, represents an effective instrument for investigating the hysteresis phenomena in the two-dimensional electron gas itself. An unusual “anticoercive” behavior of the hysteresis is revealed. A comparative analysis of the results obtained and the experimental data on the long relaxation of eddy currents and on the ferromagnetic state of the quantum Hall liquid indicates the common physical origin of these effects.
Received: 05.07.2007
English version:
Journal of Experimental and Theoretical Physics Letters, 2007, Volume 86, Issue 4, Pages 264–267
DOI: https://doi.org/10.1134/S0021364007160102
Bibliographic databases:
Document Type: Article
PACS: 71.45.-d, 73.23.-b, 73.43.-f
Language: Russian


Citation: M. V. Budantsev, A. G. Pogosov, A. E. Plotnikov, A. K. Bakarov, A. I. Toropov, J. C. Portal, “Giant hysteresis of magnetoresistance in the quantum hall effect regime”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:4 (2007), 294–298; JETP Letters, 86:4 (2007), 264–267
Linking options:
  • https://www.mathnet.ru/eng/jetpl835
  • https://www.mathnet.ru/eng/jetpl/v86/i4/p294
  • This publication is cited in the following 9 articles:
    1. Zhdanov E.Yu., Pogosov A.G., Pokhabov D.A., Budantsev M.V., Kozhukhov A.S., Bakarov A.K., Optoelectron. Instrum. Data Proc., 54:5 (2018), 496–501  crossref  isi  scopus
    2. Pogosov A.G., Budantsev M.V., Shevyrin A.A., Zhdanov E.Yu., Pokhabov D.A., Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, eds. Latyshev A., Dvurechenskii A., Aseev A., Elsevier Science BV, 2017, 101–129  crossref  isi  scopus
    3. Pokhabov D.A. Pogosov A.G. Budantsev M.V. Zhdanov E.Yu. Bakarov A.K., Semiconductors, 50:8 (2016), 1049–1053  crossref  isi  elib  scopus
    4. Budantsev M.V. Pokhabov D.A. Pogosov A.G. Zhdanov E.Yu. Bakarov A.K. Toropov A.I., Semiconductors, 48:11 (2014), 1423–1431  crossref  isi  elib  scopus
    5. Budantsev M.V., Pogosov A.G., Pokhabov D.A., Zhdanov E.Yu., Bakarov A.K., Toropov A.I., 20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics (Hmf-20), Journal of Physics Conference Series, 456, IOP Publishing Ltd, 2013  crossref  isi  scopus
    6. Rekhviashvili S.Sh., Potapov A.A., J. Commun. Technol. Electron., 57:2 (2012), 189–191  crossref  isi  elib  elib  scopus
    7. Budantsev M.V., Pogosov A.G., Pokhabov D.A., Zhdanov E.Yu., Bakarov A.K., Toropov A.I., Portal J.C., Physics of Semiconductors: 30th International Conference on the Physics of Semiconductors, AIP Conference Proceedings, 1399, 2011  isi
    8. JETP Letters, 89:1 (2009), 46–49  mathnet  crossref  isi
    9. JETP Letters, 89:2 (2009), 92–95  mathnet  crossref  isi
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    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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