Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2007, Volume 86, Issue 3, Pages 231–235(Mi jetpl821)
This article is cited in 40 scientific papers (total in 40 papers)
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Spin polarization induced by optical and microwave resonance radiation in a Si vacancy in SiC: A promising subject for the spectroscopy of single defects
Abstract:
Depending on the temperature, crystal polytype, and crystal position, two opposite schemes have been observed for the optical alignment of the populations of spin sublevels in the ground state of a Si vacancy in SiC upon irradiation with unpolarized light at frequencies of zero-phonon lines. A giant change by a factor of 2–3 has been found in the luminescence intensity of zero-phonon lines in zero magnetic field upon absorption of microwave radiation with energy equal to the fine-structure splitting of spin sublevels of the vacancy ground state, which opens up possibilities for magnetic resonance detection at a single vacancy.
Citation:
P. G. Baranov, A. P. Bundakova, I. V. Borovyh, S. B. Orlinskii, R. Zondervan, J. Shmidt, “Spin polarization induced by optical and microwave resonance radiation in a Si vacancy in SiC: A promising subject for the spectroscopy of single defects”, Pis'ma v Zh. Èksper. Teoret. Fiz., 86:3 (2007), 231–235; JETP Letters, 86:3 (2007), 202–206
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This publication is cited in the following 40 articles:
Kirill V. Likhachev, Maxim V. Uchaev, Igor P. Veyshtort, Anastasia V. Batueva, Aleksandr S. Gurin, Roman A. Babunts, Pavel G. Baranov, Journal of Applied Physics, 137:1 (2025)
Mokhov Evgeniy N, Baranov Pavel G, Kazarova Olga P, Open Journal of Chemistry, 10:1 (2024), 004
K. V. Likhachev, I. P. Veishtort, M. V. Uchaev, A. V. Batueva, V. V. Yakovleva, A. S. Gurin, R. A. Babunts, P. G. Baranov, JETP Letters, 119:2 (2024), 78–83
K. V. Likhachev, A. M. Skomorokhov, M. V. Uchaev, Yu. A. Uspenskaya, V. V. Kozlovskii, M. E. Levinshtein, I. A. Eliseev, A. N. Smirnov, D. D. Kramuschenko, R. A. Babunts, P. G. Baranov, Pisma v ZhETF, 120:5 (2024), 367–373
K. V. Likhachev, A. M. Skoromokhov, M. V. Uchaev, Yu. A. Uspenskaya, V. V. Kozlovski, M. E. Levinshtein, I. A. Eliseev, A. N. Smirnov, D. D. Kramushchenko, R. A. Babunts, P. G. Baranov, Jetp Lett., 120:5 (2024), 354
R. A. Babunts, Yu. A. Uspenskaya, A. P. Bundakova, G. V. Mamin, E. N. Mokhov, P. G. Baranov, JETP Letters, 118:9 (2023), 629–636
R. A. Babunts, Yu. A. Uspenskaya, A. S. Gurin, A. P. Bundakova, G. V. Mamin, A. N. Anisimov, E. N. Mokhov, P. G. Baranov, JETP Letters, 116:7 (2022), 485–492
R. A. Babunts, Yu. A. Uspenskaya, A. P. Bundakova, G. V. Mamin, A. N. Anisimov, P. G. Baranov, JETP Letters, 116:11 (2022), 785–790
R. A. Babunts, A. N. Anisimov, I. D. Breev, A. S. Gurin, A. P. Bundakova, M. V. Muzafarova, E. N. Mokhov, P. G. Baranov, JETP Letters, 114:8 (2021), 463–469
A. A. Lebedev, P. A. Ivanov, M. E. Levinshtein, E. N. Mokhov, S. S. Nagalyuk, A. N. Anisimov, P. G. Baranov, Phys. Usp., 62:8 (2019), 754–794
P. G. Baranov, A. M. Kalashnikova, V. I. Kozub, V. L. Korenev, Yu. G. Kusrayev, R. V. Pisarev, V. F. Sapega, I. A. Akimov, M. Bayer, A. V Scherbakov, D. R. Yakovlev, Phys. Usp., 62:8 (2019), 795–822
A. N. Anisimov, V. A. Soltamov, I. D. Breev, M. M. Khalisov, R. A. Babunts, A. V. Ankudinov, P. G. Baranov, JETP Letters, 108:9 (2018), 610–615
Yang W., Ma W.-L., Liu R.-B., Rep. Prog. Phys., 80:1 (2017), 016001
Baranov P.G. von Bardeleben H.J. Jelezko F. Wrachtrup J.: P. G. Baranov, H. J. von Bardeleben, F. Jelezko, J. Wrachtrup, Magnetic Resonance of Semiconductors and Their Nanostructures: Basic and Advanced Applications, Springer Series in Materials Science, 253, Springer-Verlag Wien, 2017, 435–518