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CONDENSED MATTER
Growth of silicene by molecular beam epitaxy on CaF$_2$/Si(111) substrates modified by electron irradiation
A. F. Zinovievaab, V. A. Zinovyeva, A. V. Katsyubaa, V. A. Volodinab, V. I. Muratovb, A. V. Dvurechenskiiab a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences,
Novosibirsk, 630090 Russia
b Novosibirsk State University, Novosibirsk, 630090 Russia
Abstract:
For the first time, the possibility of producing silicene on CaF$_2$/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi$_2$ with hexagonal packing formed under an electron beam can be used as a natural template for the subsequent growth of silicene. Silicon is deposited on such surfaces and the formation of silicene islands is confirmed by atomic force microscopy and Raman spectroscopy.
Received: 06.03.2024 Revised: 30.03.2024 Accepted: 01.04.2024
Citation:
A. F. Zinovieva, V. A. Zinovyev, A. V. Katsyuba, V. A. Volodin, V. I. Muratov, A. V. Dvurechenskii, “Growth of silicene by molecular beam epitaxy on CaF$_2$/Si(111) substrates modified by electron irradiation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 119:9 (2024), 692–696; JETP Letters, 119:9 (2024), 703–707
Linking options:
https://www.mathnet.ru/eng/jetpl7220 https://www.mathnet.ru/eng/jetpl/v119/i9/p692
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Abstract page: | 11 | References: | 5 | First page: | 1 |
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