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This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Josephson dynamics at high transmissions: voltage and current bias limits
A. V. Galaktionov, A. D. Zaikin Tamm Department of Theoretical Physics, Lebedev Physical Institute, Russian Academy of Sciences,
Moscow, 119991 Russia
Abstract:
We establish a direct relation between the $I-V$ curves for highly transparent Josephson junctions in the voltage- and current-biased regimes. We demonstrate that the presence of sub-Ohmic dissipation at subgap voltages and temperatures yields the linear dependence of the average voltage $\overline V$ on the bias current I exceeding the critical one ${{I}_{c}}$, in contrast to the square root dependence $\overline V \propto \sqrt {I - {{I}_{c}}} $ in the Ohmic limit. Our predictions are compared with recent experimental findings.
Received: 02.08.2023 Revised: 26.09.2023 Accepted: 26.09.2023
Citation:
A. V. Galaktionov, A. D. Zaikin, “Josephson dynamics at high transmissions: voltage and current bias limits”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:9 (2023), 671–676; JETP Letters, 118:9 (2023), 658–663
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https://www.mathnet.ru/eng/jetpl7077 https://www.mathnet.ru/eng/jetpl/v118/i9/p671
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Abstract page: | 18 | References: | 4 |
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