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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2023, Volume 118, Issue 2, Pages 110–117
DOI: https://doi.org/10.31857/S1234567823140082
(Mi jetpl6994)
 

CONDENSED MATTER

Memory effects in the magnetoresistance of two-component electron systems

K. S. Denisov, K. A. Baryshnikov, P. S. Alekseev

Ioffe Institute, St. Petersburg, 194021 Russia
References:
Abstract: The theory of the magnetotransport in a two-component electron system with rare macroscopic defects has been developed. In such a system, the classical memory effects in the scattering of electrons by defects and a slow transfer of electrons between the components of the liquid occurring due to the electron–electron scattering play a decisive role. It has been shown that the flow regime depends on the ratio of the sample width to the characteristic internal length, which is determined by the rate of electron transfer between the components. In samples wider than the internal length, the flow of the two-component liquid as a whole is formed within the bulk of the sample and is described by the corresponding Drude formulas taking into account memory effects. In this case, the magnetoresistance is positive at low magnetic fields and negative at high fields. In samples narrower than the characteristic length, the transfers involving a change in the type of electrons do not provide enough time to form a unified liquid. As a result, the flows of different components are independent and described by their own conductivities, taking into account the memory effects, while the magnetoresistance is strictly negative.
Funding agency Grant number
Russian Science Foundation 18-72-10111-П
Foundation for the Development of Theoretical Physics and Mathematics BASIS
This work was supported in part by the Russian Science Foundation (project no. 18-72-10111-P, analytical calculations). P.S. Alekseev and K.S. Denisov acknowledge the support of the Foundation for the Advancement of Theoretical Physics and Mathematics BASIS.
Received: 04.04.2023
Revised: 13.06.2023
Accepted: 14.06.2023
English version:
Journal of Experimental and Theoretical Physics Letters, 2023, Volume 118, Issue 2, Pages 123–129
DOI: https://doi.org/10.1134/S0021364023601860
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: K. S. Denisov, K. A. Baryshnikov, P. S. Alekseev, “Memory effects in the magnetoresistance of two-component electron systems”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:2 (2023), 110–117; JETP Letters, 118:2 (2023), 123–129
Citation in format AMSBIB
\Bibitem{DenBarAle23}
\by K.~S.~Denisov, K.~A.~Baryshnikov, P.~S.~Alekseev
\paper Memory effects in the magnetoresistance of two-component electron systems
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2023
\vol 118
\issue 2
\pages 110--117
\mathnet{http://mi.mathnet.ru/jetpl6994}
\crossref{https://doi.org/10.31857/S1234567823140082}
\edn{https://elibrary.ru/gzkxjr}
\transl
\jour JETP Letters
\yr 2023
\vol 118
\issue 2
\pages 123--129
\crossref{https://doi.org/10.1134/S0021364023601860}
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