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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Topological memory with multiply-connected planar magnetic nanoelements
K. L. Metlovab a Donetsk Institute for Physics and Engineering, Donetsk, 283048 Russia
b Institute for Numerical Mathematics, Russian Academy of Sciences, Moscow, 119991 Russia
Abstract:
A coding scheme is introduced to store a set of linked bit strings in planar magnetic nanoelements with holes. Analytical expressions for the corresponding magnetization distributions are developed up to a homotopy and the specific examples are given for doubly- and triply-connected cases. The energy barriers, protecting the information-bearing states, are discussed. Compared to a set of disparate simply-connected nanoelements of the same total connectivity, the nanoelements with holes can hold much more information due to the possibility of linking the individual bits.
Received: 11.04.2023 Revised: 06.06.2023 Accepted: 08.06.2023
Citation:
K. L. Metlov, “Topological memory with multiply-connected planar magnetic nanoelements”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:2 (2023), 95–101; JETP Letters, 118:2 (2023), 105–111
Linking options:
https://www.mathnet.ru/eng/jetpl6991 https://www.mathnet.ru/eng/jetpl/v118/i2/p95
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