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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 91, Issue 8, Pages 442–445
(Mi jetpl699)
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This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Spin filtering in double tunnel junctions: The two-band model of the electronic structure of magnetic insulators
T. A. Khachaturova, M. A. Belogolovskii, A. I. Khachaturov Donetsk Physical-Technical Institute, National Academy of Sciences of Ukraine
Abstract:
The effect of the top of the valence band of an insulator on spin filtering in tunnel structures with nanometer magnetic dielectric layers is discussed. It has been shown that the effect disappears completely at a zero bias voltage and is significantly suppressed at finite voltages if the Fermi level lies in the middle of the band gap of the insulator. This is the main cause of the recently observed striking discrepancy between the theoretical values of the magnetoresistance of double tunneling spin filters and the respective experimental data.
Received: 27.01.2010 Revised: 11.03.2010
Citation:
T. A. Khachaturova, M. A. Belogolovskii, A. I. Khachaturov, “Spin filtering in double tunnel junctions: The two-band model of the electronic structure of magnetic insulators”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:8 (2010), 442–445; JETP Letters, 91:8 (2010), 407–409
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https://www.mathnet.ru/eng/jetpl699 https://www.mathnet.ru/eng/jetpl/v91/i8/p442
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Abstract page: | 210 | Full-text PDF : | 79 | References: | 31 |
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