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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Plasma excitations in sige/si quantum wells
A. R. Khisameevaa, A. V. Shchepetilnikovab, G. A. Nikolaeva, S. A. Lopatinaab, Ya. V. Fedotovaa, I. V. Kukushkina a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432 Russia
b HSE University, Moscow, 101000 Russia
Abstract:
Plasma and magnetoplasma excitations in high-quality undoped two-dimensional electron systems based on SiGe/Si quantum wells are studied in detail. A two-dimensional electron system is formed by applying a vo-ltage to the top gate, which is partially transparent to subterahertz radiation in the frequency range of 20–160 GHz. The results for SiGe/Si quantum wells with a Sb $\delta$-doping layer are also presented for comparison. The transport and quantum scattering times for both structures are directly determined. It has been found that the effective electron mass is almost independent of the two-dimensional electron density in a wide density range.
Received: 28.04.2023 Revised: 01.06.2023 Accepted: 01.06.2023
Citation:
A. R. Khisameeva, A. V. Shchepetilnikov, G. A. Nikolaev, S. A. Lopatina, Ya. V. Fedotova, I. V. Kukushkin, “Plasma excitations in sige/si quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 118:1 (2023), 55–61; JETP Letters, 118:1 (2023), 67–73
Linking options:
https://www.mathnet.ru/eng/jetpl6985 https://www.mathnet.ru/eng/jetpl/v118/i1/p55
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Abstract page: | 67 | References: | 18 | First page: | 6 |
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