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OPTICS AND NUCLEAR PHYSICS
Ultrathin GeTe crystal in a strong femtosecond laser field: manifestation of a quantum size effect
S. A. Aseyeva, B. N. Mironova, I. V. Kochikovb, A. A. Lotinc, A. A. Ischenkod, E. A. Ryabova a Institute of Spectroscopy, Russian Academy of Sciences, Troitsk, Moscow, 108840 Russia
b Faculty of Physics, Moscow State University, Moscow, 119234 Russia
c Institute of Problems of Laser and Information Technologies, Federal Scientific Research Centre Crystallography and
Photonics, Russian Academy of Sciences, Shatura, Moscow region, 140700 Russia
d Lomonosov Institute of Fine Chemical Technology, Russian Technological University, Moscow, 119571 Russia
Abstract:
The behavior of a thin-film GeTe crystal induced by intense femtosecond laser pulses ($\lambda = 0.8$ $\mu$m) has been studied using a pulsed electron diffractometer. The sample is an annealed 20-nm GeTe film on a copper grid with a carbon coating. It has been found that laser ablation results in the formation of an ultrathin GeTe crystal (assumingly, GeTe monolayer) with a high radiation resistance. Possible reasons for the detected nanosize effect are discussed.
Received: 03.04.2023 Revised: 20.04.2023 Accepted: 20.04.2023
Citation:
S. A. Aseyev, B. N. Mironov, I. V. Kochikov, A. A. Lotin, A. A. Ischenko, E. A. Ryabov, “Ultrathin GeTe crystal in a strong femtosecond laser field: manifestation of a quantum size effect”, Pis'ma v Zh. Èksper. Teoret. Fiz., 117:11 (2023), 814–818; JETP Letters, 117:11 (2023), 810–813
Linking options:
https://www.mathnet.ru/eng/jetpl6953 https://www.mathnet.ru/eng/jetpl/v117/i11/p814
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Abstract page: | 75 | References: | 18 | First page: | 6 |
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