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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2023, Volume 117, Issue 7, Pages 550–555
DOI: https://doi.org/10.31857/S123456782307011X
(Mi jetpl6913)
 

CONDENSED MATTER

Resistive switching effect in TaN/HfO$_x$/Ni memristors with a filament formed under local electron-beam crystallization

V. A. Voronkovskiia, A. K. Gerasimovaa, V. Sh. Alievab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
b Novosibirsk State Technical University, Novosibirsk, 630073 Russia
References:
Abstract: The influence of an intense electron beam on a nonstoichiometric oxide HfO$_x$ ($x \approx 1.8$) layer of a TaN/HfO$_x$/Ni memristor on its electrophysical properties is studied. It is found that the crystalline $h$-Hf, $m$-HfO$_2$, $o$-HfO$_2$, and $t$-HfO$_2$ phases are formed in the HfOx film under this impact. It is established that memristors demonstrate resistive switching at certain electron fluence values. At the same time, such memristors have resistive switching voltages several times lower than those of unirradiated memristors. In addition, they exhibit a multiple decrease in the spread of resistive switching voltages, as well as resistances in low- and high-resistance states. The current–voltage curves of the obtained memristors indicate that the charge transport in them is described by the space-charge-limited current mechanism.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation
This work was supported by the Ministry of Science and Higher Education of the Russian Federation.
Received: 09.12.2022
Revised: 02.03.2023
Accepted: 05.03.2023
English version:
Journal of Experimental and Theoretical Physics Letters, 2023, Volume 117, Issue 7, Pages 546–550
DOI: https://doi.org/10.1134/S0021364023600593
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. A. Voronkovskii, A. K. Gerasimova, V. Sh. Aliev, “Resistive switching effect in TaN/HfO$_x$/Ni memristors with a filament formed under local electron-beam crystallization”, Pis'ma v Zh. Èksper. Teoret. Fiz., 117:7 (2023), 550–555; JETP Letters, 117:7 (2023), 546–550
Citation in format AMSBIB
\Bibitem{VorGerAli23}
\by V.~A.~Voronkovskii, A.~K.~Gerasimova, V.~Sh.~Aliev
\paper Resistive switching effect in TaN/HfO$_x$/Ni memristors with a filament formed under local electron-beam crystallization
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2023
\vol 117
\issue 7
\pages 550--555
\mathnet{http://mi.mathnet.ru/jetpl6913}
\crossref{https://doi.org/10.31857/S123456782307011X}
\edn{https://elibrary.ru/kktpgx}
\transl
\jour JETP Letters
\yr 2023
\vol 117
\issue 7
\pages 546--550
\crossref{https://doi.org/10.1134/S0021364023600593}
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