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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2023, Volume 117, Issue 3, Pages 235–241
DOI: https://doi.org/10.31857/S1234567823030096 (Mi jetpl6864) 		 
CONDENSED MATTER

Vanadium-containing planar heterostructures based on topological insulators

E. K. Petrovab, I. V. Silkinb, V. M. Kuznetsovb, T. V. Menshchikovab, E. V. Chulkovacb

a St. Petersburg State University, St. Petersburg, 198504 Russia
b National Research Tomsk State University, Tomsk, 634050 Russia
c Departamento de Polímeros y Materiales Avanzados: Física, Química y Tecnología, Facultad de Ciencias Químicas, Universidad del País Vasco UPV/EHU, 20080 San Sebastían/Donostia, Basque Country, Spain
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DOI: https://doi.org/10.31857/S1234567823030096
Abstract: Vanadium-containing heterostructures consisting of an ultrathin magnetic film on the surface of a nonmagnetic topological insulator have been studied theoretically. A method has been demonstrated to control the Dirac point shift in the $k$ space, which is a length measure of an exotic flat band appearing upon the formation of domain walls on the surface of antiferromagnetic topological insulator. The Dirac point shift is inversely proportional to the group velocity of electrons at the Dirac point and is proportional to the degree of localization of the topological state in the magnetic film. The shift is controlled by selecting a substrate with a certain work function. Particular systems have been proposed for the experimental study of flat band features in antiferromagnetic topological insulators.
Funding agency Grant number
Ministry of Science and Higher Education of the Russian Federation FSWM-2020-0033
This work was supported by the Ministry of Science and Higher Education of the Russian Federation (state assignment no. FSWM-2020-0033).
Received: 07.12.2022
Revised: 22.12.2022
Accepted: 23.12.2022
English version:
Journal of Experimental and Theoretical Physics Letters, 2023, Volume 117, Issue 3, Pages 228–233
DOI: https://doi.org/10.1134/S0021364022603293
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. K. Petrov, I. V. Silkin, V. M. Kuznetsov, T. V. Menshchikova, E. V. Chulkov, “Vanadium-containing planar heterostructures based on topological insulators”, Pis'ma v Zh. Èksper. Teoret. Fiz., 117:3 (2023), 235–241; JETP Letters, 117:3 (2023), 228–233
Citation in format AMSBIB
\Bibitem{PetSilKuz23}
\by E.~K.~Petrov, I.~V.~Silkin, V.~M.~Kuznetsov, T.~V.~Menshchikova, E.~V.~Chulkov
\paper Vanadium-containing planar heterostructures based on topological insulators
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2023
\vol 117
\issue 3
\pages 235--241
\mathnet{http://mi.mathnet.ru/jetpl6864}
\crossref{https://doi.org/10.31857/S1234567823030096}
\edn{https://elibrary.ru/oxnfkv}
\transl
\jour JETP Letters
\yr 2023
\vol 117
\issue 3
\pages 228--233
\crossref{https://doi.org/10.1134/S0021364022603293}
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