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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2010, Volume 91, Issue 7, Pages 375–378
(Mi jetpl686)
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This article is cited in 27 scientific papers (total in 27 papers)
CONDENSED MATTER
Weak antilocalization in HgTe quantum wells near a topological transition
E. B. Olshanetskiia, Z. D. Kvonab, G. M. Gusevc, N. N. Mikhailova, S. A. Dvoretskiia, J. C. Portaldef a Institute of Semiconductor Physics of SB RAS
b Novosibirsk State University
c Instituto de Fisica, Universidade de Sao Paulo
d Grenoble High Magnetic Fields Laboratory
e Institut National des Sciences Appliquées de Toulouse
f Institut Universitaire de France
Abstract:
The anomalous alternating magnetoresistivity in HgTe quantum wells with thicknesses of 5.8 and 8.3 nm, i.e., near the transition from the direct band spectrum to an inverted spectrum, has been revealed and analyzed. It has been shown that the revealed anomalous alternating magnetoresistivity in wells with an inverted spectrum is well described by the theory developed by S.V. Iordanskii et al. [JETP Lett. 60, 206 (1994)] and W. Knap et al. [Phys. Rev. B 53, 3912 (1996)]. A detailed comparison of the experimental data with the theory indicates the presence of only the cubic term in the spin splitting of the electronic spectrum. The applicability conditions of the mentioned theory are not satisfied in a well with a direct gap and, for this reason, such a certain conclusion is impossible. The results indicate the existence of a strong spin-orbit interaction in symmetric HgTe quantum wells near the topological transition.
Received: 24.02.2008
Citation:
E. B. Olshanetskii, Z. D. Kvon, G. M. Gusev, N. N. Mikhailov, S. A. Dvoretskii, J. C. Portal, “Weak antilocalization in HgTe quantum wells near a topological transition”, Pis'ma v Zh. Èksper. Teoret. Fiz., 91:7 (2010), 375–378; JETP Letters, 91:7 (2010), 347–350
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