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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2022, Volume 116, Issue 12, Pages 825–829
DOI: https://doi.org/10.31857/S1234567822240016 (Mi jetpl6822) 		 
This article is cited in 1 scientific paper (total in 1 paper)

OPTICS AND NUCLEAR PHYSICS

Generation of terahertz radiation under the femtosecond laser excitation of a multilayer structure based on a-Si:H/a-SiC:H/c-Si

A. V. Andrianova, A. N. Aleshina, S. N. Abolmasovb, E. I. Terukovacb, E. V. Beregulina

a Ioffe Institute, St. Petersburg, 194021 Russia
b R&D Center of Thin Film Technologies in Energetics, St. Petersburg, 194064 Russia
c St. Petersburg State Electrotechnical University LETI, St. Petersburg, 197376 Russia
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DOI: https://doi.org/10.31857/S1234567822240016
Abstract: Coherent terahertz radiation has been generated in $p-n$ heterostructures based on a-Si:H/a-SiC:H/c-Si excited by 800-nm femtosecond laser pulses at room temperature. Terahertz radiation is generated when a reverse bias voltage is applied to heterostructures. The properties of the generated terahertz radiation strongly depend on the bias voltage, which reflects the dynamics of nonequilibrium charge carriers produced by femtosecond laser pump in the heterostructure.
Received: 12.10.2022
Revised: 25.10.2022
Accepted: 25.10.2022
English version:
Journal of Experimental and Theoretical Physics Letters, 2022, Volume 116, Issue 12, Pages 859–862
DOI: https://doi.org/10.1134/S0021364022602585
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Andrianov, A. N. Aleshin, S. N. Abolmasov, E. I. Terukov, E. V. Beregulin, “Generation of terahertz radiation under the femtosecond laser excitation of a multilayer structure based on a-Si:H/a-SiC:H/c-Si”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:12 (2022), 825–829; JETP Letters, 116:12 (2022), 859–862
Citation in format AMSBIB
\Bibitem{AndAleAbo22}
\by A.~V.~Andrianov, A.~N.~Aleshin, S.~N.~Abolmasov, E.~I.~Terukov, E.~V.~Beregulin
\paper Generation of terahertz radiation under the femtosecond laser excitation of a multilayer structure based on a-Si:H/a-SiC:H/c-Si
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2022
\vol 116
\issue 12
\pages 825--829
\mathnet{http://mi.mathnet.ru/jetpl6822}
\crossref{https://doi.org/10.31857/S1234567822240016}
\edn{https://elibrary.ru/nduyhp}
\transl
\jour JETP Letters
\yr 2022
\vol 116
\issue 12
\pages 859--862
\crossref{https://doi.org/10.1134/S0021364022602585}
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  • https://www.mathnet.ru/eng/jetpl/v116/i12/p825
    • This publication is cited in the following 1 articles:
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