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This article is cited in 1 scientific paper (total in 1 paper)
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Origin of structure inversion asymmetry in double HgTe quantum wells
A. V. Ikonnikova, S. S. Krishtopenkoab, L. S. Bovkuncd, N. N. Mikhailove, S. A. Dvoretskiie, B. A. Piotd, M. Potemskid, M. Orlitafd, F. Teppeb, V. I. Gavrilenkoc a Faculty of Physics, Moscow State University, Moscow, 119991 Russia
b Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, Montpellier, F-34095 France
c Institute for Physics of Microstructures, Federal Research Center Institute of Applied Physics,
Russian Academy of Sciences, Nizhny Novgorod, 603950 Russia
d LNCMI-EMFL, CNRS UPR3228, Université Grenoble Alpes, Université Toulouse, INSA-T, Grenoble and Toulouse, 38042 France
e Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences,
Novosibirsk, 630090 Russia
f Institute of Physics, Charles University, Prague, CZ-12116 Czech Republic
Abstract:
The density dependences of the splitting values of the dominant magneto-absorption lines in undoped $p$-type double HgTe/CdHgTe quantum wells are studied. An analysis of the splitting values of the magneto-absorption lines on the basis of self-consistent calculations of the band structure has made it possible to clarify the origin of structure inversion asymmetry in double HgTe/CdHgTe quantum wells and to determine the contributions caused by the built-in electric field, the difference between the thicknesses of the quantum wells, and the order of their arrangement in the structure. The discrepancy between the experimental energy splitting of the zero-mode Landau levels, extracted from the analysis of two types of lines, indicates the influence of many-particle effects on the transition energies between Landau levels.
Received: 05.09.2022 Revised: 05.09.2022 Accepted: 15.09.2022
Citation:
A. V. Ikonnikov, S. S. Krishtopenko, L. S. Bovkun, N. N. Mikhailov, S. A. Dvoretskii, B. A. Piot, M. Potemski, M. Orlita, F. Teppe, V. I. Gavrilenko, “Origin of structure inversion asymmetry in double HgTe quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 116:8 (2022), 535–543; JETP Letters, 116:8 (2022), 547–555
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https://www.mathnet.ru/eng/jetpl6781 https://www.mathnet.ru/eng/jetpl/v116/i8/p535
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Abstract page: | 40 | References: | 8 | First page: | 5 |
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