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This article is cited in 1 scientific paper (total in 1 paper)
CONDENSED MATTER
Weak antilocalization effect in an AlAs/AlGaAs quantum well
A. V. Shchepetilnikovab, A. R. Khisameevaa, A. A. Dremina, I. V. Kukushkina a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432 Russia
b National Research University Higher School of Economics, Moscow, 101000 Russia
Abstract:
Weak antilocalization in a narrow AlAs quantum well containing a two-dimensional electron system with a large effective mass at low temperatures has been studied. Such quantum corrections are due to a strong spin–orbit coupling in it. The spin–orbit interaction constant has been determined from the approximation of experimental data by a theoretical model in the diffusion approximation. Additionally, this constant has also been independently measured from the modification of the single-particle g-factor in the quantum Hall effect regime in the same sample using electron paramagnetic resonance. Electron paramagnetic resonance spectroscopy and analysis of the weak antilocalization effect yield close values of the interaction constants $\beta = 7.6$ and $10.1$ meV Å, respectively. Agreement between $\beta$ values thus obtained becomes full if effects of the strong electron–electron interaction are taken into account in the weak antilocalization model by renormalizing the effective mass of the electron.
Received: 04.04.2022 Revised: 07.04.2022 Accepted: 07.04.2022
Citation:
A. V. Shchepetilnikov, A. R. Khisameeva, A. A. Dremin, I. V. Kukushkin, “Weak antilocalization effect in an AlAs/AlGaAs quantum well”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:9 (2022), 595–600; JETP Letters, 115:9 (2022), 548–552
Linking options:
https://www.mathnet.ru/eng/jetpl6665 https://www.mathnet.ru/eng/jetpl/v115/i9/p595
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Abstract page: | 68 | References: | 21 | First page: | 15 |
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