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This article is cited in 8 scientific papers (total in 8 papers)
CONDENSED MATTER
Hall effect in a doped Mott insulator: DMFT approximation
E. Z. Kuchinskiia, N. A. Kuleevaa, D. I. Khomskiib, M. V. Sadovskiia a Institute for Electrophysics, Ural Branch, Russian Academy of Sciences, Yekaterinburg, 620016 Russia
b II Physikalisches Institut, Universität zu Köln, Köln, 50937 Germany
Abstract:
In the framework of dynamical mean-field theory, we analyze the Hall effect in a doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence of the Hall coefficient and Hall number on hole doping, determining the critical concentration for sign change of the Hall coefficient. Significant temperature dependence of the Hall effect is noted. Good agreement is demonstrated with the concentration dependence of the Hall number obtained in experiments in the normal state of YBCO.
Received: 01.03.2022 Revised: 01.03.2022 Accepted: 01.03.2022
Citation:
E. Z. Kuchinskii, N. A. Kuleeva, D. I. Khomskii, M. V. Sadovskii, “Hall effect in a doped Mott insulator: DMFT approximation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:7 (2022), 444–447; JETP Letters, 115:7 (2022), 402–405
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https://www.mathnet.ru/eng/jetpl6642 https://www.mathnet.ru/eng/jetpl/v115/i7/p444
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Abstract page: | 70 | References: | 14 | First page: | 14 |
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