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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2022, Volume 115, Issue 1, Pages 47–50
DOI: https://doi.org/10.31857/S1234567822010086
(Mi jetpl6584)
 

This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Electronic structure and properties of two-dimensional silicon dioxide

T. A. Khachaturova, V. G. But'ko, A. A. Gusev

Donetsk Institute for Physics and Engineering, Donetsk, 283114 Ukraine
References:
Abstract: The electronic structure of two-dimensional silicon dioxide is studied using the projection augmented wave method within the density functional theory. The nonempirical calculations are significantly refined in the GW approximation. Nanofilms with a thickness of 0.35 to 1.76 nm, where the maximum number of atomic layer is 30, are considered. It is shown that the band gap strongly depends on the thickness of the two-dimensional nanocrystal and demonstrates three different types of behavior. This phenomenon is due to the shift of the Fermi level determined by the ratio of the numbers of Si and O atoms in the unit cell.
Received: 24.09.2021
Revised: 18.11.2021
Accepted: 19.11.2021
English version:
Journal of Experimental and Theoretical Physics Letters, 2022, Volume 115, Issue 1, Pages 41–44
DOI: https://doi.org/10.1134/S0021364022010106
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: T. A. Khachaturova, V. G. But'ko, A. A. Gusev, “Electronic structure and properties of two-dimensional silicon dioxide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 115:1 (2022), 47–50; JETP Letters, 115:1 (2022), 41–44
Citation in format AMSBIB
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\paper Electronic structure and properties of two-dimensional silicon dioxide
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\yr 2022
\vol 115
\issue 1
\pages 47--50
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  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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