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This article is cited in 2 scientific papers (total in 2 papers)
OPTICS AND NUCLEAR PHYSICS
Formation of luminescent structures in thin a-Si:H–Er films irradiated by femtosecond laser pulses
A. O. Larina, E. I. Ageeva, L. N. Dvoretskaiab, A. M. Mozharovb, I. S. Mukhinba, D. A. Zueva a ITMO University, St. Petersburg, 197101 Russia
b Alferov University, Russian Academy of Sciences, St. Petersburg, 194021 Russia
Abstract:
The process of intcorporation of erbium into silicon in a multilayer film consisting of Er and a-Si:H layers irradiated by femtosecond laser pulses is studied. The effect of the energy density of laser radiation on the phase composition and on the photoluminescence signal intensity from exposed regions is analyzed. The methods of thermal and femtosecond laser doping of films are compared. The results can be useful for the development of promising optoelectronic devices based on Si:Er structures.
Received: 23.09.2021 Revised: 02.11.2021 Accepted: 03.11.2021
Citation:
A. O. Larin, E. I. Ageev, L. N. Dvoretskaia, A. M. Mozharov, I. S. Mukhin, D. A. Zuev, “Formation of luminescent structures in thin a-Si:H–Er films irradiated by femtosecond laser pulses”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:11 (2021), 749–755; JETP Letters, 114:11 (2021), 681–686
Linking options:
https://www.mathnet.ru/eng/jetpl6563 https://www.mathnet.ru/eng/jetpl/v114/i11/p749
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Abstract page: | 73 | References: | 20 | First page: | 12 |
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