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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2021, Volume 114, Issue 9, Pages 620–624
DOI: https://doi.org/10.31857/S1234567821210084 (Mi jetpl6544) 		 
This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Coulomb center in a transition metal dichalcogenide monolayer

M. M. Mahmoodianab, A. V. Chaplikab

a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090 Russia
b Novosibirsk State University, Novosibirsk, 630090 Russia
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DOI: https://doi.org/10.31857/S1234567821210084
Abstract: Electronic processes involving a charged impurity in a transition metal dichalcogenide monolayer and in gapped graphene have been theoretically studied. The spectrum of bound states, the transport cross section for scattering of electrons on a charged donor center, and the donor photoionization probability have been calculated within the minimal two-band model. The last parameter has a significant valley selectivity.
Funding agency Grant number
Russian Science Foundation 17-12-01039
This work was supported by the Russian Science Foundation (project no. 17-12-01039).
Received: 12.08.2021
Revised: 30.09.2021
Accepted: 30.09.2021
English version:
Journal of Experimental and Theoretical Physics Letters, 2021, Volume 114, Issue 9, Pages 545–550
DOI: https://doi.org/10.1134/S0021364021210104
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. M. Mahmoodian, A. V. Chaplik, “Coulomb center in a transition metal dichalcogenide monolayer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:9 (2021), 620–624; JETP Letters, 114:9 (2021), 545–550
Citation in format AMSBIB
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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    References:18
    First page:9
     
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