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This article is cited in 2 scientific papers (total in 2 papers)
CONDENSED MATTER
Coulomb center in a transition metal dichalcogenide monolayer
M. M. Mahmoodianab, A. V. Chaplikab a Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences,
Novosibirsk, 630090 Russia
b Novosibirsk State University, Novosibirsk, 630090 Russia
Abstract:
Electronic processes involving a charged impurity in a transition metal dichalcogenide monolayer and in gapped graphene have been theoretically studied. The spectrum of bound states, the transport cross section for scattering of electrons on a charged donor center, and the donor photoionization probability have been calculated within the minimal two-band model. The last parameter has a significant valley selectivity.
Received: 12.08.2021 Revised: 30.09.2021 Accepted: 30.09.2021
Citation:
M. M. Mahmoodian, A. V. Chaplik, “Coulomb center in a transition metal dichalcogenide monolayer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:9 (2021), 620–624; JETP Letters, 114:9 (2021), 545–550
Linking options:
https://www.mathnet.ru/eng/jetpl6544 https://www.mathnet.ru/eng/jetpl/v114/i9/p620
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Abstract page: | 95 | References: | 24 | First page: | 18 |
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