Abstract:
Electronic processes involving a charged impurity in a transition metal dichalcogenide monolayer and in gapped graphene have been theoretically studied. The spectrum of bound states, the transport cross section for scattering of electrons on a charged donor center, and the donor photoionization probability have been calculated within the minimal two-band model. The last parameter has a significant valley selectivity.
Citation:
M. M. Mahmoodian, A. V. Chaplik, “Coulomb center in a transition metal dichalcogenide monolayer”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:9 (2021), 620–624; JETP Letters, 114:9 (2021), 545–550