Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Impact factor

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pis'ma v Zh. Èksper. Teoret. Fiz.:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2021, Volume 114, Issue 3, Pages 192–195
DOI: https://doi.org/10.31857/S123456782115009X (Mi jetpl6484) 		 
This article is cited in 1 scientific paper (total in 1 paper)

CONDENSED MATTER

Role of interfaces in the permittivity tensor of thin layers of a ferromagnetic metal

S. G. Ovchinnikovab, O. A. Maksimovaab, S. A. Lyaschenkob, I. A. Yakovlevb, S. N. Varnakovb

a Siberian Federal University, Krasnoyarsk, 660041 Russia
b Kirensky Institute of Physics, Federal Research Center KSC, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036 Russia
Full-text PDF (205 kB) Citations (1)
References:
PDF
HTML
DOI: https://doi.org/10.31857/S123456782115009X
Abstract: It is known from experimental studies that the components of the permittivity tensor $\varepsilon$ depend on layer thicknesses of multilayer thin films, and for nanometer layers, it is necessary to additionally consider the interlayer interfaces. This study provides an answer to the question of what is the reason for the influence of these interfaces on film properties. It is shown that the contribution of interband matrix elements for ferromagnetic films with off-diagonal components of the permittivity tensor determines the ratio between the diagonal and off-diagonal components of the tensor $\varepsilon$ at a ferromagnetic layer thickness of about 10 nm.
Funding agency Grant number
Russian Science Foundation 21-12-00226
This work was supported by the Russian Science Foundation, project no. 21-12-00226, http://rscf.ru/project/21-12-00226/.
Received: 26.06.2021
Revised: 09.07.2021
Accepted: 09.07.2021
English version:
Journal of Experimental and Theoretical Physics Letters, 2021, Volume 114, Issue 3, Pages 163–165
DOI: https://doi.org/10.1134/S0021364021150066
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. G. Ovchinnikov, O. A. Maksimova, S. A. Lyaschenko, I. A. Yakovlev, S. N. Varnakov, “Role of interfaces in the permittivity tensor of thin layers of a ferromagnetic metal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:3 (2021), 192–195; JETP Letters, 114:3 (2021), 163–165
Citation in format AMSBIB
\Bibitem{OvcMakLya21}
\by S.~G.~Ovchinnikov, O.~A.~Maksimova, S.~A.~Lyaschenko, I.~A.~Yakovlev, S.~N.~Varnakov
\paper Role of interfaces in the permittivity tensor of thin layers of a ferromagnetic metal
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
\yr 2021
\vol 114
\issue 3
\pages 192--195
\mathnet{http://mi.mathnet.ru/jetpl6484}
\crossref{https://doi.org/10.31857/S123456782115009X}
\elib{https://elibrary.ru/item.asp?id=46422299}
\transl
\jour JETP Letters
\yr 2021
\vol 114
\issue 3
\pages 163--165
\crossref{https://doi.org/10.1134/S0021364021150066}
\isi{https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=Publons&SrcAuth=Publons_CEL&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=000702678300009}
\scopus{https://www.scopus.com/record/display.url?origin=inward&eid=2-s2.0-85116299872}
Linking options:
  • https://www.mathnet.ru/eng/jetpl6484
  • https://www.mathnet.ru/eng/jetpl/v114/i3/p192
    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
    Statistics & downloads:
    Abstract page:86
    References:14
    First page:7
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2024