Abstract:
The low-frequency microwave photoconductance of a short (100 nm) quantum point contact based on a high-mobility two-dimensional electron gas in the frequency range of 2–3 GHz is investigated for the first time. The giant photoconductance in the tunneling regime and the negative photoconductance in the open regime are observed. It is shown by numerical simulations that such response to microwave irradiation is caused by the forced oscillations of the saddle-point potential in the quantum point contact and of the probe voltage applied to the contact.
This study was supported by the Russian Foundation for Basic Research (project no. 20-02-00385) and the Ministry of Science and Higher Education of the Russian Federation (state assignment for the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences).
Citation:
V. A. Tkachenko, A. S. Yaroshevich, Z. D. Kvon, O. A. Tkachenko, E. E. Rodyakina, A. V. Latyshev, “Low-frequency microwave response of a quantum point contact”, Pis'ma v Zh. Èksper. Teoret. Fiz., 114:2 (2021), 108–113; JETP Letters, 114:2 (2021), 110–115